SKB04N60ATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 9.4A 50W TO263-3
$0.84
Available to order
Reference Price (USD)
1+
$0.84000
500+
$0.8316
1000+
$0.8232
1500+
$0.8148
2000+
$0.8064
2500+
$0.798
Exquisite packaging
Discount
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Optimize your power systems with the SKB04N60ATMA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the SKB04N60ATMA1 delivers consistent and reliable operation. Trust Infineon Technologies's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 9.4 A
- Current - Collector Pulsed (Icm): 19 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
- Power - Max: 50 W
- Switching Energy: 131µJ
- Input Type: Standard
- Gate Charge: 24 nC
- Td (on/off) @ 25°C: 22ns/237ns
- Test Condition: 400V, 4A, 67Ohm, 15V
- Reverse Recovery Time (trr): 180 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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