SM8S10A-E3/2D
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
TVS DIODE 10VWM 17VC DO218AB
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SM8S10A-E3/2D TVS diode by Vishay General Semiconductor - Diodes Division offers unmatched protection against voltage transients. With its robust design and high surge current capacity, this diode is ideal for harsh environments. TVS diodes are commonly used in power management, RF systems, and LED lighting. They help prevent damage caused by sudden voltage surges, such as those from lightning or power fluctuations. For instance, the SM8S10A-E3/2D can safeguard solar inverters from overvoltage events. Choose Vishay General Semiconductor - Diodes Division for reliable and efficient circuit protection solutions.
Specifications
- Product Status: Obsolete
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 10V
- Voltage - Breakdown (Min): 11.1V
- Voltage - Clamping (Max) @ Ipp: 17V
- Current - Peak Pulse (10/1000µs): 388A
- Power - Peak Pulse: 6600W (6.6kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-218AB
- Supplier Device Package: DO-218AB
Related Products
Littelfuse Inc.
1.5SMC510
Vishay General Semiconductor - Diodes Division
SMCJ48C-E3/57T
Littelfuse Inc.
P6SMB47
Taiwan Semiconductor Corporation
BZW04-5V8HB0G
Littelfuse Inc.
1KSMBJ130A
onsemi
MMBZ18VALT1
Taiwan Semiconductor Corporation
P4KE47CAHR1G
Vishay General Semiconductor - Diodes Division
SMAJ9.0AHM3_A/H
Microchip Technology
MX5KP45CA
Microchip Technology