SM8S33AHE3/2E

Vishay General Semiconductor - Diodes Division

Manufacturer

Vishay General Semiconductor - Diodes Division

Description:

TVS DIODE 33VWM 53.3VC DO218AB

Datasheet:

SM8S33AHE3/2E Datasheet

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The SM8S33AHE3/2E from Vishay General Semiconductor - Diodes Division is a high-performance TVS diode designed for robust circuit protection. These diodes are essential for safeguarding sensitive electronic components from voltage spikes and transient events. With fast response times and high surge capabilities, the SM8S33AHE3/2E ensures reliable performance in demanding environments. TVS diodes are widely used in telecommunications, automotive, and industrial applications. For instance, they protect data lines in routers and prevent damage from electrostatic discharge (ESD) in automotive electronics. Choose Vishay General Semiconductor - Diodes Division's SM8S33AHE3/2E for superior protection and durability in your circuits.

Specifications

Product Status: Obsolete
Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 33V
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Current - Peak Pulse (10/1000µs): 124A
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Applications: Automotive
Capacitance @ Frequency: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-218AB
Supplier Device Package: DO-218AB

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SM8S33AHE3/2E

Reference Price (USD)

Specifications

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