SMA5106
Sanken
Sanken
TRANS 4NPN DARL 120V 5A
$5.28
Available to order
Reference Price (USD)
1+
$5.53000
18+
$4.93500
36+
$4.44139
108+
$4.04667
252+
$3.65190
504+
$3.27685
1,008+
$2.76360
2,502+
$2.63200
Exquisite packaging
Discount
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The SMA5106 BJT Array from Sanken brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The SMA5106 undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: 4 NPN Darlington (Quad)
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V
- Power - Max: 5W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 12-SIP
- Supplier Device Package: 12-SIP
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