SMBTA06E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 80V 0.5A SOT23
$0.06
Available to order
Reference Price (USD)
39,000+
$0.03534
Exquisite packaging
Discount
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The SMBTA06E6327HTSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the SMBTA06E6327HTSA1 is a reliable component for demanding applications. Infineon Technologies's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 330 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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