SMBTA56E6433HTMA1
Infineon Technologies
Infineon Technologies
TRANS PNP 80V 0.5A SOT-23
$0.04
Available to order
Reference Price (USD)
30,000+
$0.03175
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the SMBTA56E6433HTMA1 Bipolar Junction Transistor (BJT) from Infineon Technologies. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The SMBTA56E6433HTMA1 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Infineon Technologies to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 330 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
Infineon Technologies
BC848AE6327
Fairchild Semiconductor
2N5366
NTE Electronics, Inc
NTE2409
Diodes Incorporated
ZTX1048ASTZ
Diotec Semiconductor
MMBTA06
NTE Electronics, Inc
TIP32E
onsemi
NSV12200LT1G
Infineon Technologies
BCR166E6393HTSA1
NXP USA Inc.
BC807-16/6215
STMicroelectronics