SMMBTA56LT3G
onsemi
onsemi
TRANS PNP 80V 0.5A SOT23-3
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SMMBTA56LT3G from onsemi is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the SMMBTA56LT3G ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of SMMBTA56LT3G and enhance your electronic projects with this top-quality component from onsemi.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 225 mW
- Frequency - Transition: 50MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
Related Products
Renesas Electronics America Inc
2SA1122CCTL-E
Diodes Incorporated
2DD1766P-13
Central Semiconductor Corp
CMUT2907A TR PBFREE
onsemi
BD681STU-ON
onsemi
BCW30LT1
Microchip Technology
JANKCA2N4150
Diotec Semiconductor
BC858A-AQ
Diodes Incorporated
ZXTP2008GTA
Yangzhou Yangjie Electronic Technology Co.,Ltd
MMBT4403-F2-0000HF
Diodes Incorporated