SMMJT350T3G
onsemi
onsemi
TRANS PNP 300V 0.5A SOT223
$0.25
Available to order
Reference Price (USD)
1+
$0.25130
500+
$0.248787
1000+
$0.246274
1500+
$0.243761
2000+
$0.241248
2500+
$0.238735
Exquisite packaging
Discount
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The SMMJT350T3G Bipolar Junction Transistor (BJT) from onsemi is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the SMMJT350T3G is a reliable component for demanding applications. onsemi's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
- Power - Max: 2.75 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223 (TO-261)
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