SMUN5111T1G
onsemi
onsemi
TRANS PREBIAS PNP 50V SC70-3
$0.34
Available to order
Reference Price (USD)
3,000+
$0.05261
6,000+
$0.04599
15,000+
$0.03938
30,000+
$0.03717
75,000+
$0.03497
150,000+
$0.03129
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineers choose SMUN5111T1G for its exceptional linearity in amplification circuits. onsemi's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 202 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
Related Products
Panasonic Electronic Components
UNR222600L
Diodes Incorporated
DDTC123JE-7
onsemi
MMUN2132LT1G
Diodes Incorporated
ADTC143TUAQ-13
onsemi
MMUN2113LT3G
Infineon Technologies
BCR162E6327HTSA1
Rohm Semiconductor
DTA144TCAT116
Toshiba Semiconductor and Storage
RN2310,LXHF
Diodes Incorporated
DDTC143TCAQ-13-F
Fairchild Semiconductor