SMUN5213DW1T1G
onsemi
onsemi
TRANS PREBIAS 2NPN 50V SC88
$0.41
Available to order
Reference Price (USD)
3,000+
$0.08760
6,000+
$0.07920
15,000+
$0.07080
30,000+
$0.06660
75,000+
$0.05960
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your designs with onsemi's SMUN5213DW1T1G, a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The SMUN5213DW1T1G is widely used in lighting systems, portable electronics, and automotive accessories. onsemi's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the SMUN5213DW1T1G is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 187mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Related Products
Toshiba Semiconductor and Storage
RN1963(TE85L,F)
Panasonic Electronic Components
UP0338300L
onsemi
EMG2DXV5T5
Diodes Incorporated
DCX143EU-7-F
onsemi
NSBC114YPDP6T5G
Toshiba Semiconductor and Storage
RN1902,LXHF(CT
Nexperia USA Inc.
PUMB13,115
onsemi
NSVMUN5111DW1T3G
Rohm Semiconductor
UMA5NTR
Toshiba Semiconductor and Storage