SP8M4HZGTB
Rohm Semiconductor
Rohm Semiconductor
30V DUAL NCH+PCH POWER MOSFET. S
$2.55
Available to order
Reference Price (USD)
1+
$2.55000
500+
$2.5245
1000+
$2.499
1500+
$2.4735
2000+
$2.448
2500+
$2.4225
Exquisite packaging
Discount
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The SP8M4HZGTB by Rohm Semiconductor is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the SP8M4HZGTB provides reliable operation under stringent conditions. Rohm Semiconductor's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 7A (Ta)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, 2600pF @ 10V
- Power - Max: 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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