Shopping cart

Subtotal: $0.00

SPA04N80C3XKSA1

Infineon Technologies
SPA04N80C3XKSA1 Preview
Infineon Technologies
MOSFET N-CH 800V 4A TO220-FP
$2.30
Available to order
Reference Price (USD)
1+
$1.84000
10+
$1.67000
100+
$1.36070
500+
$1.07992
1,000+
$0.91142
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-31
  • Package / Case: TO-220-3 Full Pack

Related Products

Vishay Siliconix

SQD07N25-350H_GE3

Infineon Technologies

IAUC80N04S6L032ATMA1

Vishay Siliconix

IRLR024PBF

Infineon Technologies

SPD04N60C2

Infineon Technologies

IPB60R360P7ATMA1

Infineon Technologies

ISC0702NLSATMA1

Diodes Incorporated

DMN62D1LFD-13

Alpha & Omega Semiconductor Inc.

AOD380A60C

Infineon Technologies

IPD90N06S4L03ATMA2

Toshiba Semiconductor and Storage

TK9A55DA(STA4,Q,M)

Top