Shopping cart

Subtotal: $0.00

SPA06N80C3XKSA1

Infineon Technologies
SPA06N80C3XKSA1 Preview
Infineon Technologies
MOSFET N-CH 800V 6A TO220-FP
$2.82
Available to order
Reference Price (USD)
1+
$2.25000
10+
$2.04200
100+
$1.66370
500+
$1.32040
1,000+
$1.11438
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-31
  • Package / Case: TO-220-3 Full Pack

Related Products

Vishay Siliconix

IRFS11N50APBF

Rectron USA

RM11N800T2

Toshiba Semiconductor and Storage

TK40E06N1,S1X

Fairchild Semiconductor

HUFA76407D3S

Fairchild Semiconductor

IRFR430BTF

Vishay Siliconix

SIHG47N60E-E3

Infineon Technologies

IPA70R360P7SXKSA1

Vishay Siliconix

SQM120N02-1M3L_GE3

Top