SPB04N60C3ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 4.5A TO263-3
$0.65
Available to order
Reference Price (USD)
1+
$0.65000
500+
$0.6435
1000+
$0.637
1500+
$0.6305
2000+
$0.624
2500+
$0.6175
Exquisite packaging
Discount
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The SPB04N60C3ATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the SPB04N60C3ATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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