SPP04N80C3XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 4A TO220-3
$2.17
Available to order
Reference Price (USD)
1+
$1.94000
10+
$1.73500
100+
$1.38970
500+
$1.09828
1,000+
$0.88633
Exquisite packaging
Discount
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Meet the SPP04N80C3XKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SPP04N80C3XKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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