SQ2303ES-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 2.5A TO236
$0.56
Available to order
Reference Price (USD)
3,000+
$0.16368
6,000+
$0.15312
15,000+
$0.14256
30,000+
$0.13517
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SQ2303ES-T1_GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SQ2303ES-T1_GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.9W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Fairchild Semiconductor
FDFMA2P859T
STMicroelectronics
STS13N3LLH5
IXYS
IXFX160N30T
Infineon Technologies
IRF6678
STMicroelectronics
STD6N80K5
Vishay Siliconix
SI7858ADP-T1-E3
Alpha & Omega Semiconductor Inc.
AOT2502L
Nexperia USA Inc.
PMPB15XN,115
Infineon Technologies
IPA65R310CFDXKSA2
onsemi