SQ2361AEES-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 60V 2.8A SSOT23
$0.70
Available to order
Reference Price (USD)
3,000+
$0.23826
6,000+
$0.22374
15,000+
$0.20922
30,000+
$0.19906
Exquisite packaging
Discount
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Upgrade your designs with the SQ2361AEES-T1_GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SQ2361AEES-T1_GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Operating Temperature: -55°C ~ 175°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: -
- Package / Case: TO-236-3, SC-59, SOT-23-3
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