SQ2361ES-T1_BE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 60V 2.8A SOT23-3
$0.66
Available to order
Reference Price (USD)
1+
$0.66000
500+
$0.6534
1000+
$0.6468
1500+
$0.6402
2000+
$0.6336
2500+
$0.627
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the SQ2361ES-T1_BE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SQ2361ES-T1_BE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Alpha & Omega Semiconductor Inc.
AOTF266L
Alpha & Omega Semiconductor Inc.
AOT482L
STMicroelectronics
STU7N105K5
Toshiba Semiconductor and Storage
TPH4R50ANH1,LQ
Infineon Technologies
IPU06N03LZG
Infineon Technologies
IPU80R1K4P7AKMA1
Texas Instruments
CSD16570Q5B
Vishay Siliconix
SIHK065N60E-T1-GE3
Micro Commercial Co
2N7002T-TP
onsemi