SQ4425EY-T1_BE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CHANNEL 30V 18A 8SOIC
$2.02
Available to order
Reference Price (USD)
1+
$2.02000
500+
$1.9998
1000+
$1.9796
1500+
$1.9594
2000+
$1.9392
2500+
$1.919
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQ4425EY-T1_BE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SQ4425EY-T1_BE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 6.8W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
SQ2303ES-T1_BE3
Vishay Siliconix
SI3459BDV-T1-GE3
Infineon Technologies
IPS80R750P7AKMA1
STMicroelectronics
STF9HN65M2
Diodes Incorporated
DMT3009LFVWQ-7
Infineon Technologies
SPS01N60C3
onsemi
NVD6416ANLT4G-VF01
onsemi
NTTD4401FR2G
Vishay Siliconix
SISH472DN-T1-GE3
Nexperia USA Inc.