SQ9407EY-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CHANNEL 60V 4.6A 8SO
$1.24
Available to order
Reference Price (USD)
2,500+
$0.50840
5,000+
$0.48453
12,500+
$0.46748
Exquisite packaging
Discount
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Enhance your electronic projects with the SQ9407EY-T1_GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SQ9407EY-T1_GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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