Shopping cart

Subtotal: $0.00

SQJ407EP-T1_BE3

Vishay Siliconix
SQJ407EP-T1_BE3 Preview
Vishay Siliconix
P-CHANNEL 30-V (D-S) 175C MOSFET
$1.55
Available to order
Reference Price (USD)
1+
$1.55000
500+
$1.5345
1000+
$1.519
1500+
$1.5035
2000+
$1.488
2500+
$1.4725
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 68W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

Related Products

Infineon Technologies

IPC50N04S5L5R5ATMA1

Nexperia USA Inc.

PMN55ENEH

Rohm Semiconductor

US5U2TR

Vishay Siliconix

SIA4265EDJ-T1-GE3

Vishay Siliconix

SI3433CDV-T1-E3

Alpha & Omega Semiconductor Inc.

AOTF5N100

Fairchild Semiconductor

HUFA76407P3

Fairchild Semiconductor

FQP70N08

Infineon Technologies

IPI075N15N3GXKSA1

Infineon Technologies

IRFI1310NPBF

Top