SQJ570EP-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N/P-CH 100V POWERPAK SO8
$1.27
Available to order
Reference Price (USD)
3,000+
$0.47232
6,000+
$0.45014
15,000+
$0.43430
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the SQJ570EP-T1_GE3 from Vishay Siliconix, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the SQJ570EP-T1_GE3 provides the reliability and efficiency you need. Vishay Siliconix's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc), 9.5A (Tc)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 6A, 10V, 146mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V, 600pF @ 25V
- Power - Max: 27W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
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