SQJ886EP-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 60A PPAK SO-8
$1.64
Available to order
Reference Price (USD)
3,000+
$0.61221
6,000+
$0.58347
15,000+
$0.56294
Exquisite packaging
Discount
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The SQJ886EP-T1_GE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SQJ886EP-T1_GE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15.3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2922 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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