SQJA12EP-T1_GE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 100-V (D-S) 175C MOSFE
$1.97
Available to order
Reference Price (USD)
1+
$1.97000
500+
$1.9503
1000+
$1.9306
1500+
$1.9109
2000+
$1.8912
2500+
$1.8715
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SQJA12EP-T1_GE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SQJA12EP-T1_GE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
onsemi
NTD80N02T4
onsemi
NTP110N65S3HF
Infineon Technologies
IRFR9024NTRPBF
Alpha & Omega Semiconductor Inc.
AOTF12N60L
Vishay Siliconix
SIHB22N65E-T1-GE3
Panjit International Inc.
PJE8403_R1_00001
onsemi
FQA62N25C
onsemi
NDF03N60ZG
IXYS
IXFP30N60X
IXYS