SQJA20EP-T1_BE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 200-V (D-S) 175C MOSFE
$1.54
Available to order
Reference Price (USD)
1+
$1.54000
500+
$1.5246
1000+
$1.5092
1500+
$1.4938
2000+
$1.4784
2500+
$1.463
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SQJA20EP-T1_BE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SQJA20EP-T1_BE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
FDP20N50F
Alpha & Omega Semiconductor Inc.
AON7418
Nexperia USA Inc.
PMV65XPER
Infineon Technologies
IPD85P04P4L06ATMA2
Toshiba Semiconductor and Storage
TK33S10N1L,LXHQ
Infineon Technologies
IRF7580MTRPBF
Rohm Semiconductor
SCT4062KW7HRTL
Taiwan Semiconductor Corporation
TSM070NH04CV RGG
onsemi
NVMFS4C03NT3G
Toshiba Semiconductor and Storage