SQJA80EP-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 80V 60A PPAK SO-8
$1.39
Available to order
Reference Price (USD)
3,000+
$0.57072
6,000+
$0.54392
15,000+
$0.52478
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SQJA80EP-T1_GE3 by Vishay Siliconix, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SQJA80EP-T1_GE3 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Infineon Technologies
BSC042N03LSGATMA1
IXYS
IXTN400N15X4
Infineon Technologies
BSZ0502NSIATMA1
STMicroelectronics
STF10N60M2
Nexperia USA Inc.
BUK9D23-40EX
onsemi
FDD5N50NZTM
EPC
EPC2040
Vishay Siliconix
SUM70040E-GE3
Infineon Technologies
IRFI3205PBF
Nexperia USA Inc.