SQJQ160E-T1_GE3
Vishay Siliconix
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 60 V (D-S)
$3.70
Available to order
Reference Price (USD)
1+
$3.70000
500+
$3.663
1000+
$3.626
1500+
$3.589
2000+
$3.552
2500+
$3.515
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQJQ160E-T1_GE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SQJQ160E-T1_GE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 602A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16070 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: PowerPAK® 8 x 8
Related Products
Renesas Electronics America Inc
RJK0346DPA-01#J0B
Diodes Incorporated
DMN2065UW-7
onsemi
SCH1301-TL-E
Infineon Technologies
IPU60R2K1CEAKMA1
Infineon Technologies
IPI90R500C3XKSA2
Infineon Technologies
IPD60R1K5CEATMA1
onsemi
NVMFS6H836NWFT1G
onsemi
NTMFS5C404NLTT3G
Toshiba Semiconductor and Storage
TK25E60X5,S1X
Rectron USA