Shopping cart

Subtotal: $0.00

SQM40081EL_GE3

Vishay Siliconix
SQM40081EL_GE3 Preview
Vishay Siliconix
MOSFET P-CH 40V 50A TO263
$1.87
Available to order
Reference Price (USD)
800+
$0.91245
1,600+
$0.83738
2,400+
$0.77963
5,600+
$0.75075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 107W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D²Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Microchip Technology

APT8056BVRG

Vishay Siliconix

SQJ474EP-T2_GE3

STMicroelectronics

STW58N65DM2AG

Diodes Incorporated

DMN6075SQ-7

Vishay Siliconix

SQA413CEJW-T1_GE3

Nexperia USA Inc.

PMPB100ENEX

Nexperia USA Inc.

BUK9Y4R4-40E,115

STMicroelectronics

STFU9N65M2

Top