SSM3J114TU(TE85L)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 1.8A UFM
$0.44
Available to order
Reference Price (USD)
1+
$0.44000
500+
$0.4356
1000+
$0.4312
1500+
$0.4268
2000+
$0.4224
2500+
$0.418
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SSM3J114TU(TE85L) by Toshiba Semiconductor and Storage, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SSM3J114TU(TE85L) stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Toshiba Semiconductor and Storage.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
- Rds On (Max) @ Id, Vgs: 149mOhm @ 600mA, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
Related Products
Infineon Technologies
IRF1010EZSTRLP
EPC
EPC8004
STMicroelectronics
STH13N120K5-2AG
Infineon Technologies
IPB80N06S4L05ATMA2
Vishay Siliconix
SI2318CDS-T1-BE3
Fairchild Semiconductor
FDS5692Z
onsemi
NVTR01P02LT1G
Fairchild Semiconductor
IRFS640A
IXYS
IXTP20N65X2M
Infineon Technologies