SSM3J168F,LXHF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
SMOS LOW RON VDS:-60V VGSS:+10/-
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
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Enhance your electronic projects with the SSM3J168F,LXHF single MOSFET from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Toshiba Semiconductor and Storage's SSM3J168F,LXHF for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 1.55Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: S-Mini
- Package / Case: TO-236-3, SC-59, SOT-23-3
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