SSM5H16TU,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 1.9A UFV
$0.50
Available to order
Reference Price (USD)
1+
$0.50000
500+
$0.495
1000+
$0.49
1500+
$0.485
2000+
$0.48
2500+
$0.475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SSM5H16TU,LF by Toshiba Semiconductor and Storage, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SSM5H16TU,LF stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Toshiba Semiconductor and Storage.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
- Rds On (Max) @ Id, Vgs: 133mOhm @ 1A, 4V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 123 pF @ 15 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFV
- Package / Case: 6-SMD (5 Leads), Flat Lead
Related Products
Infineon Technologies
AUIRFSA8409-7TRL
Diodes Incorporated
DMN3110S-7
Vishay Siliconix
SI2323DS-T1-BE3
Rohm Semiconductor
R6030ENXC7G
Diodes Incorporated
DMN65D8LW-7
Rectron USA
RM5N800LD
Rohm Semiconductor
R6015ENX
STMicroelectronics
STB13N80K5
Vishay Siliconix
SI7336ADP-T1-GE3
Diodes Incorporated