SSM6N56FE,LM
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 0.8A
$0.50
Available to order
Reference Price (USD)
4,000+
$0.08400
8,000+
$0.07560
12,000+
$0.06720
28,000+
$0.06300
100,000+
$0.05880
Exquisite packaging
Discount
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Choose the SSM6N56FE,LM from Toshiba Semiconductor and Storage for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the SSM6N56FE,LM stands out for its reliability and efficiency. Toshiba Semiconductor and Storage's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA
- Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6