SSM6N815R,LF
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage
MOSFET 2N-CH 100V 2A 6TSOPF
$0.47
Available to order
Reference Price (USD)
3,000+
$0.15035
6,000+
$0.14065
15,000+
$0.13580
Exquisite packaging
Discount
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The SSM6N815R,LF by Toshiba Semiconductor and Storage is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the SSM6N815R,LF offers superior functionality and longevity. Trust Toshiba Semiconductor and Storage to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
- Power - Max: 1.8W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: 6-TSOP-F