SSM6N951L,EFF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
SMALL SIGNAL MOSFET RDSON: 4.4MO
$1.03
Available to order
Reference Price (USD)
1+
$1.03000
500+
$1.0197
1000+
$1.0094
1500+
$0.9991
2000+
$0.9888
2500+
$0.9785
Exquisite packaging
Discount
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Upgrade your electronic designs with the SSM6N951L,EFF by Toshiba Semiconductor and Storage, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the SSM6N951L,EFF ensures energy efficiency and robust performance. Toshiba Semiconductor and Storage's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 5.1mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, No Lead
- Supplier Device Package: 6-TCSPA (2.14x1.67)
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