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SSM6P16FE(TE85L,F)

Toshiba Semiconductor and Storage
SSM6P16FE(TE85L,F) Preview
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 0.1A ES6
$0.47
Available to order
Reference Price (USD)
1+
$0.55000
10+
$0.38600
100+
$0.25380
500+
$0.14996
1,000+
$0.11536
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ES6
  • Package / Case: SOT-563, SOT-666

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