STB10N60M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 7.5A D2PAK
$1.10
Available to order
Reference Price (USD)
1,000+
$1.09956
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STB10N60M2 single MOSFET from STMicroelectronics is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the STB10N60M2 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
IRFZ24PBF
STMicroelectronics
STF11N65M2
Diodes Incorporated
ZXMP7A17GQTA
Diodes Incorporated
ZVP0545GTA
onsemi
NVMFS5C646NLWFAFT3G
Infineon Technologies
IPP80N04S403AKSA1
IXYS
IXTA08N120P-TRL
Taiwan Semiconductor Corporation
TSM033NB04CR RLG
Infineon Technologies
IPN60R1K0PFD7SATMA1
Vishay Siliconix