STB11NM60T4
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 11A D2PAK
$4.63
Available to order
Reference Price (USD)
1,000+
$2.02202
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the STB11NM60T4 by STMicroelectronics, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the STB11NM60T4 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Diodes Incorporated
DMN2005LPK-7
Vishay Siliconix
SI2374DS-T1-GE3
Vishay Siliconix
SQJA72EP-T1_GE3
Toshiba Semiconductor and Storage
2SK3700(F)
Nexperia USA Inc.
PSMN5R3-25MLDX
onsemi
NTLGF3501NT1G
Vishay Siliconix
SI1302DL-T1-GE3
IXYS
IXFH150N25X3
Texas Instruments
CSD18509Q5B
onsemi