STB7ANM60N
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 5A D2PAK
$1.69
Available to order
Reference Price (USD)
1,000+
$1.57080
2,000+
$1.47400
5,000+
$1.42560
Exquisite packaging
Discount
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Meet the STB7ANM60N by STMicroelectronics, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The STB7ANM60N stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose STMicroelectronics.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250mA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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