STB9NK80Z
STMicroelectronics
STMicroelectronics
MOSFET N-CH 800V 5.2A D2PAK
$2.51
Available to order
Reference Price (USD)
1,000+
$1.93760
2,000+
$1.85136
5,000+
$1.78976
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the STB9NK80Z by STMicroelectronics, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the STB9NK80Z is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
FDMS86183
Infineon Technologies
IPD70R950CEAUMA1
onsemi
NTTFS5C466NLTAG
Vishay Siliconix
SI5418DU-T1-GE3
Diodes Incorporated
DMN62D0UW-7
Vishay Siliconix
SUP60020E-GE3
Sanyo
NIF9N05CLT3G-SY
Renesas Electronics America Inc
HAT1142R02-EL-E
NXP USA Inc.
BUK754R0-40C,127
Infineon Technologies