STD10N60M2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 7.5A DPAK
$1.72
Available to order
Reference Price (USD)
2,500+
$0.83040
5,000+
$0.79344
12,500+
$0.76704
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STD10N60M2 from STMicroelectronics redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the STD10N60M2 offers the precision and reliability you need. Trust STMicroelectronics to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NTMFS4982NFT3G
Infineon Technologies
BSC079N03SG
Infineon Technologies
IRF2804STRRPBF
Harris Corporation
BUZ21
Texas Instruments
CSD17506Q5A
Vishay Siliconix
IRFIZ34GPBF
Nexperia USA Inc.
PSMN2R5-40YLDX
Vishay Siliconix
SQS482ENW-T1_GE3
Nexperia USA Inc.
PSMN069-100YS,115
GeneSiC Semiconductor