STD18N60M6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 13A DPAK
$2.60
Available to order
Reference Price (USD)
1+
$2.60000
500+
$2.574
1000+
$2.548
1500+
$2.522
2000+
$2.496
2500+
$2.47
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the STD18N60M6 single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the STD18N60M6 combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Diodes Incorporated
DMP2120U-13
Renesas Electronics America Inc
2SK3299B-S19-AY
onsemi
FDS4435BZ
STMicroelectronics
STWA67N60M6
Transphorm
TP65H015G5WS
Renesas Electronics America Inc
2SK3306B-S17-AY
Rohm Semiconductor
RP1E050RPTR
Vishay Siliconix
SI4396DY-T1-GE3
Vishay Siliconix
SISS5708DN-T1-GE3
Panjit International Inc.