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STFI10N65K3

STMicroelectronics
STFI10N65K3 Preview
STMicroelectronics
MOSFET N-CH 650V 10A I2PAKFP
$2.86
Available to order
Reference Price (USD)
1+
$3.54000
50+
$2.87820
100+
$2.64060
500+
$2.17728
1,000+
$1.86840
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 3.6A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAKFP (TO-281)
  • Package / Case: TO-262-3 Full Pack, I²Pak

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