STGF10NB60SD
STMicroelectronics
STMicroelectronics
IGBT 600V 23A 25W TO220FP
$2.38
Available to order
Reference Price (USD)
1+
$1.67000
50+
$1.41760
100+
$1.20770
500+
$0.99226
1,000+
$0.82215
2,500+
$0.76545
5,000+
$0.75600
Exquisite packaging
Discount
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Upgrade your power management systems with the STGF10NB60SD Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the STGF10NB60SD provides reliable and efficient operation. STMicroelectronics's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose STGF10NB60SD for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 23 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 10A
- Power - Max: 25 W
- Switching Energy: 600µJ (on), 5mJ (off)
- Input Type: Standard
- Gate Charge: 33 nC
- Td (on/off) @ 25°C: 700ns/1.2µs
- Test Condition: 480V, 10A, 1kOhm, 15V
- Reverse Recovery Time (trr): 37 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
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