STGF6M65DF2
STMicroelectronics
STMicroelectronics
IGBT TRENCH 650V 12A TO220FP
$1.68
Available to order
Reference Price (USD)
1+
$1.33000
50+
$1.14260
100+
$0.95090
500+
$0.79754
1,000+
$0.64423
2,500+
$0.60590
5,000+
$0.58035
Exquisite packaging
Discount
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The STGF6M65DF2 Single IGBT transistor by STMicroelectronics is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The STGF6M65DF2 ensures precise power control and long-term stability. With STMicroelectronics's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate STGF6M65DF2 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
- Power - Max: 24.2 W
- Switching Energy: 36µJ (on), 200µJ (off)
- Input Type: Standard
- Gate Charge: 21.2 nC
- Td (on/off) @ 25°C: 15ns/90ns
- Test Condition: 400V, 6A, 22Ohm, 15V
- Reverse Recovery Time (trr): 140 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FP
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