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STH3N150-2

STMicroelectronics
STH3N150-2 Preview
STMicroelectronics
MOSFET N-CH 1500V 2.5A H2PAK
$5.95
Available to order
Reference Price (USD)
1,000+
$2.78357
2,000+
$2.65968
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1500 V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: H²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant

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