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STL3N65M2

STMicroelectronics
STL3N65M2 Preview
STMicroelectronics
MOSFET N-CH 650V 2.3A POWERFLAT
$1.10
Available to order
Reference Price (USD)
3,000+
$0.40040
6,000+
$0.38038
15,000+
$0.36608
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 22W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerFlat™ (3.3x3.3)
  • Package / Case: 8-PowerVDFN

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