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STN1HNK60

STMicroelectronics
STN1HNK60 Preview
STMicroelectronics
MOSFET N-CH 600V 400MA SOT223
$1.16
Available to order
Reference Price (USD)
4,000+
$0.43579
8,000+
$0.41639
12,000+
$0.40254
28,000+
$0.40052
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA

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