STP11N60DM2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 10A TO220
$1.93
Available to order
Reference Price (USD)
1+
$1.91000
10+
$1.73300
100+
$1.41250
500+
$1.12096
1,000+
$0.94605
3,000+
$0.88775
5,000+
$0.85860
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STP11N60DM2 by STMicroelectronics is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the STP11N60DM2 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SI7469ADP-T1-RE3
Texas Instruments
TPS1100DR
Renesas Electronics America Inc
2SK3221-AZ
Nexperia USA Inc.
BUK6D385-100EX
Vishay Siliconix
SIHP7N60E-BE3
Diodes Incorporated
DMN2024U-13
Infineon Technologies
IPA65R065C7XKSA1
Microchip Technology
VN2410L-G
onsemi
FQP20N06
Infineon Technologies