STP11NM65N
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 11A TO-220
$2.45
Available to order
Reference Price (USD)
1+
$4.53000
50+
$3.63820
100+
$3.31490
500+
$2.68422
1,000+
$2.26380
2,500+
$2.15061
Exquisite packaging
Discount
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The STP11NM65N from STMicroelectronics sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to STMicroelectronics's STP11NM65N for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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