STP18N60DM2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 12A TO220
$1.53
Available to order
Reference Price (USD)
1+
$2.98000
50+
$2.42860
100+
$2.20130
500+
$1.74700
1,000+
$1.47441
2,500+
$1.38355
5,000+
$1.33812
Exquisite packaging
Discount
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The STP18N60DM2 from STMicroelectronics redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the STP18N60DM2 offers the precision and reliability you need. Trust STMicroelectronics to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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